|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
NCS2511 1 GHz Current Feedback Op Amp NCS2511 is a 1 GHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current feedback architecture allows for a superior bandwidth and low power consumption. Features http://onsemi.com MARKING DIAGRAM 5 1 SOT23-5 (TSOP-5) SN SUFFIX CASE 483 5 YB1AYW G 1 * * * * * * * * * * * * * * -3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp-p) 1 GHz Typ Slew Rate 2500 V/ms Supply Current 7.5 mA Input Referred Voltage Noise 5.0 nV/ Hz THD -67 dB (f = 5.0 MHz, VO = 2.0 Vp-p) Output Current 120 mA Pin Compatible with AD8001, TSH350, OPA681 This is a Pb-Free Device High Resolution Video Line Driver High-Speed Instrumentation Wide Dynamic Range IF Amp Set Top Box NTSC/PAL/HDTV 6 3 Applications YB1 A Y W G = NCS2511 = Assembly Location = Year = Work Week = Pb-Free Package SOT23-5 (TSOP-5) PINOUT OUT VEE +IN 1 + 2 3 (Top View) - 4 -IN 5 VCC NORMALIZED GAIN (dB) 0 -3 -6 -9 -12 -15 10k AV = +2 VS = "5 V RF = 270 W RL = 150 W 100k VOUT = 0.5 VPP VOUT = 2.0 VPP ORDERING INFORMATION Device NCS2511SNT1G Package SOT23-5 (TSOP-5) (Pb-Free) Shipping 3000/Tape & Reel 1M 10M 100M FREQUENCY (Hz) 1G 10G Figure 1. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 May, 2006 - Rev. 2 1 Publication Order Number: NCS2511/D NCS2511 PIN FUNCTION DESCRIPTION Pin (SOT23/SC70) 1 Symbol OUT Function Output Equivalent Circuit VCC ESD OUT VEE 2 3 VEE +IN Negative Power Supply Non-inverted Input ESD +IN VCC ESD -IN VEE 4 5 -IN VCC Inverted Input Positive Power Supply VCC See Above +IN -IN OUT CC VEE Figure 2. Simplified Device Schematic http://onsemi.com 2 NCS2511 ATTRIBUTES Characteristics ESD Human Body Model Machine Model Charged Device Model Moisture Sensitivity (Note 2) Flammability Rating Oxygen Index: 28 to 34 2.0 kV (Note 1) 200 V 1.0 kV Level 1 UL 94 V-0 @ 0.125 in Value 1. 0.8 kV between the input pairs +IN and -IN pins only. All other pins are 2.0 kV. 2. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Power Supply Voltage Input Voltage Range Input Differential Voltage Range Output Current Maximum Junction Temperature (Note 3) Operating Ambient Temperature Storage Temperature Range Power Dissipation Thermal Resistance, Junction-to-Air Symbol VS VI VID IO TJ TA Tstg PD RqJA Rating 11 vVS vVS 120 150 -40 to +85 -60 to +150 (See Graph) 121 Unit Vdc Vdc Vdc mA C C C mW C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION (mW) MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the "overheated'' condition for an extended period can result in device damage. To ensure proper operation, it is important to observe the derating curves. 1800 1600 1400 SOT23 Pkg 1200 1000 800 600 400 200 0 -50 -25 0 50 75 25 100 AMBIENT TEMPERATURE (C) 125 150 Figure 3. Power Dissipation vs. Temperature http://onsemi.com 3 NCS2511 AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = -5.0 V, TA = -40C to +85C, RL = 150 W to GND, RF = 270 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol BW Characteristic Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth Differential Gain Differential Phase Slew Rate Settling Time 0.1% Rise and Fall Time Total Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion Third-Order Intercept Spurious-Free Dynamic Range Input Referred Voltage Noise Input Referred Current Noise Conditions Min Typ Max Unit MHz AV = +2.0, VO = 0.5 Vp-p AV = +2.0, VO = 2.0 Vp-p AV = +2.0 AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V (10%-90%) AV = +2.0, Vstep = 2.0 V f = 5.0 MHz, VO = 2.0 Vp-p f = 5.0 MHz, VO = 2.0 Vp-p f = 5.0 MHz, VO = 2.0 Vp-p f = 10 MHz, VO = 1.0 Vp-p f = 5.0 MHz, VO = 2.0 Vp-p f = 1.0 MHz f = 1.0 MHz, Inverting f = 1.0 MHz, Non-Inverting 1000 800 50 0.01 0.01 2500 13 1.5 -67 -72 -70 35 70 5.0 20 30 MHz % V/ms ns ns dB dBc dBc dBm dBc nV pA Hz Hz FREQUENCY DOMAIN PERFORMANCE GF0.1dB dG dP SR ts tr tf THD HD2 HD3 IP3 SFDR eN iN TIME DOMAIN RESPONSE HARMONIC/NOISE PERFORMANCE http://onsemi.com 4 NCS2511 DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = -5.0 V, TA = -40C to +85C, RL = 150 W to GND, RF = 270 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol VIO DVIO/DT IIB DIIB/DT Characteristic Input Offset Voltage (Note 4) Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient +Input (Non-Inverting), VO = 0 V -Input (Inverting), VO = 0 V (Note 4) +Input (Non-Inverting), VO = 0 V -Input (Inverting), VO = 0 V "3.0 (See Graph) +Input (Non-Inverting) -Input (Inverting) 40 Conditions Min -10 Typ 0 6.0 "3.0 "6.0 +40 -10 "35 "35 Max +10 Unit mV mV/C mA nA/C DC PERFORMANCE INPUT CHARACTERISTICS VCM CMRR RIN CIN ROUT VO IO VS IS PSRR Input Common Mode Voltage Range (Note 4) Common Mode Rejection Ratio (Note 4) Input Resistance Differential Input Capacitance Output Resistance Output Voltage Range Output Current Operating Voltage Supply Power Supply Current Power Supply Rejection Ratio (Note 4) VO = 0 V (See Graph) 40 Closed Loop Open Loop "3.0 "90 "4.0 50 150 70 1.0 0.1 30 "4.0 "120 10 7.5 55 V dB kW W pF OUTPUT CHARACTERISTICS W V mA V mA dB POWER SUPPLY 4. Guaranteed by design and/or characterization. http://onsemi.com 5 NCS2511 AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = -2.5 V, TA = -40C to +85C, RL = 150 W to GND, RF = 270 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol BW Characteristic Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth Differential Gain Differential Phase Slew Rate Settling Time 0.1% Rise and Fall Time Total Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion Third-Order Intercept Spurious-Free Dynamic Range Input Referred Voltage Noise Input Referred Current Noise Conditions Min Typ Max Unit MHz AV = +2.0, VO = 0.5 Vp-p AV = +2.0, VO = 1.0 Vp-p AV = +2.0 AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V (10%-90%) AV = +2.0, Vstep = 1.0 V f = 5.0 MHz, VO = 1.0 Vp-p f = 5.0 MHz, VO = 1.0 Vp-p f = 5.0 MHz, VO = 1.0 Vp-p f = 10 MHz, VO = 0.5 Vp-p f = 5.0 MHz, VO = 1.0 Vp-p f = 1.0 MHz f = 1.0 MHz, Inverting f = 1.0 MHz, Non-Inverting 800 500 40 0.01 0.01 1500 10 1.2 -57 -62 -60 28 60 5.0 20 30 MHz % V/ms ns ns dB dBc dBc dBm dBc nV pA Hz Hz FREQUENCY DOMAIN PERFORMANCE GF0.1dB dG dP SR ts tr tf THD HD2 HD3 IP3 SFDR eN iN TIME DOMAIN RESPONSE HARMONIC/NOISE PERFORMANCE http://onsemi.com 6 NCS2511 DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = -2.5 V, TA = -40C to +85C, RL = 150 W to GND, RF = 270 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol VIO DVIO/DT IIB DIIB/DT Characteristic Input Offset Voltage (Note 5) Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient +Input (Non-Inverting), VO = 0 V -Input (Inverting), VO = 0 V (Note 5) +Input (Non-Inverting), VO = 0 V -Input (Inverting), VO = 0 V "1.1 (See Graph) +Input (Non-Inverting) -Input (Inverting) 40 Conditions Min -10 Typ 0 6.0 "3.0 "6.0 +40 -10 "35 "35 Max +10 Unit mV mV/C mA nA/C DC PERFORMANCE INPUT CHARACTERISTICS VCM CMRR RIN CIN ROUT VO IO VS IS PSRR Input Common Mode Voltage Range (Note 5) Common Mode Rejection Ratio (Note 5) Input Resistance Differential Input Capacitance Output Resistance Output Voltage Range Output Current Operating Voltage Supply Power Supply Current Power Supply Rejection Ratio (Note 5) VO = 0 V (See Graph) 40 Closed Loop Open Loop "1.1 "90 "1.5 50 150 70 1.0 0.1 30 "1.5 "120 5.0 6.5 55 V dB kW W pF OUTPUT CHARACTERISTICS W V mA V mA dB POWER SUPPLY 5. Guaranteed by design and/or characterization. VIN + - RL VOUT RF RF Figure 4. Typical Test Setup (AV = +2.0, RF = 270 W, RL = 150 W) http://onsemi.com 7 NCS2511 6 3 NORMALIZED GAIN (dB) 0 -3 -6 -9 -12 -15 10k AV = +2 VS = "5 V RF = 270 W RL = 150 W 100k VOUT = 0.5 VPP VOUT = 2.0 VPP 6 3 NORMALIZED GAIN (dB) 0 -3 -6 -9 AV = +1 VS = "5 V RF = 270 W RL = 150 W 100k 1M 10M 100M FREQUENCY(Hz) 1G 10G VOUT = 0.5 VPP VOUT = 1 VPP -12 1M 10M 100M FREQUENCY (Hz) 1G 10G -15 10k Figure 5. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 6 3 NORMALIZED GAIN (dB) 0 -3 -6 -9 -12 -15 10k VOUT= 1.0 VPP VS = 5 V RF = 270 W RL = 150 W 100k 1M 10M 100M 1G 10G FREQUENCY (Hz) AV = +2 AV = +1 NORMALIZED GAIN (dB) 6 3 0 -3 -6 -9 -12 -15 10k Figure 6. Frequency Response Gain (dB) vs. Frequency Av = +1.0 AV = +1 AV = +2 VOUT= 0.5 VPP VS = 5 V RF = 270 W RL = 150 W 100k 1M 10M 100M FREQUENCY (Hz) 1G 10G Figure 7. Large Signal Frequency Response Gain (dB) vs. Frequency Figure 8. Small Signal Frequency Response Gain (dB) vs. Frequency VS = 5 V Vin Vin VS = 5 V Vout Vout Figure 9. Small Signal Step Response Vertical: 1.0 V/div Horizontal: 10 ns/div Figure 10. Large Signal Step Response Vertical: 2.0 V/div Horizontal: 10 ns/div http://onsemi.com 8 NCS2511 -40 -45 DISTORTION (dB) -50 -55 -60 -65 -70 -75 1 10 FREQUENCY (MHz) HD2 THD HD3 VOUT = 2 VPP VS = 5 V RF = 270 W RL = 150 W -40 -45 DISTORTION (dB) -50 -55 -60 -65 -70 100 -75 0 0.5 1 HD2 1.5 2 2.5 3 Vout (VPP) 3.5 4 4.5 THD HD3 f = 5 MHz VS = 5 V RF = 270 W RL = 150 W Figure 11. THD, HD2, HD3 vs. Frequency Figure 12. THD, HD2, HD3 vs. Output Voltage 70 VOLTAGE NOISE (nV/Hz) 60 50 40 30 20 10 0 100 1k 10k 100k FREQUENCY (Hz) 1M CMRR (dB) VS = 5 V 0 -10 -20 -30 -40 -50 -60 10k VS = "5 V 100k 1M FREQUENCY (Hz) 10M 100M Figure 13. Input Referred Voltage Noise vs. Frequency Figure 14. CMRR vs. Frequency 0 DIFFERENTIAL GAIN (%) -10 -20 PSRR (dB) -30 -40 -50 -5 V -60 10k 100k 1M FREQUENCY (Hz) 10M 100M 0.02 0.015 0.01 0.005 0 4.43 MHz 20 MHz VS = 5 V RL = 150 W AV = +2 3.58 MHz -0.005 -0.01 50 MHz +5 V -0.015 -0.02 -0.8 -0.6 10 MHz 0.2 -0.4 -0.2 0 0.4 OFFSET VOLTAGE (V) 0.6 0.8 Figure 15. PSRR vs. Frequency Figure 16. Differential Gain http://onsemi.com 9 NCS2511 0.02 0.015 DIFFERENTIAL PHASE () 0.01 0.005 0 -0.005 -0.01 -0.015 10 MHz -0.02 -0.8 -0.6 20 MHz 50 MHz 0.4 -0.4 -0.2 0 0.2 OFFSET VOLTAGE (V) 0.6 0.8 3.58 MHz 4.43 MHz VS = 5 V RL = 150 W AV = +2 10 9 CURRENT (mA) 8 25C 7 6 5 4 -40C 85C 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 Figure 17. Differential Phase Figure 18. Supply Current vs. Power Supply (Enabled) 8 7.5 OUTPUT VOLTAGE (VPP) 7 6.5 6 5.5 5 4.5 4 3.5 3 4 5 6 7 8 9 10 11 85C -40C 25C TRANSIMPEDANCE (W) 1M 100k 10k 1k 100 10 10k VS = 5.0 V RF = 270 W RL = 150 W 100k 1M 10M 100M 1G 10G POWER SUPPLY VOLTAGE (V) FREQUENCY (Hz) Figure 19. Output Voltage Swing vs. Supply Voltage Figure 20. Transimpedance (ROL) vs. Frequency 2.0 1.8 OUTPUT RESISTANCE (W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10k VS 5.0 V NORMALIZED GAIN (dB) 9 6 3 0 -3 -6 -9 -12 100k 1M FREQUENCY (Hz) 10M 100M -15 10k AV = +2 VOUT = 0.5 Vpp VS = 5.0 V RF = 270 W RL = 150 W 100k 1M 10M 100M 10 pF 47 pF 100 pF 1G 10G FREQUENCY (Hz) Figure 21. Closed-Loop Output Resistance vs. Frequency Figure 22. Frequency Response vs. Capacitive Load http://onsemi.com 10 NCS2511 General Design Considerations The current feedback amplifier is optimized for use in high performance video and data acquisition systems. For current feedback architecture, its closed-loop bandwidth depends on the value of the feedback resistor. The closed-loop bandwidth is not a strong function of gain, as is for a voltage feedback amplifier, as shown in Figure 23. 24 21 18 15 12 9 6 3 0 -3 -6 -9 -12 -15 AV = +2 -18 VCC = +5 V -21 RL = 150 W -24 10k 100k 100 W 150 W use a current feedback amplifier with the output shorted directly to the inverting input. Printed Circuit Board Layout Techniques 270 W 330 W GAIN (dB) 400 W 450 W 500 W Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (3/16 is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than 1/4 are recommended. Video Performance 1M 10M 100M 1G 10G FREQUENCY (Hz) This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. ESD Protection Figure 23. Frequency Response vs. RF The -3.0 dB bandwidth is, to some extent, dependent on the power supply voltages. By using lower power supplies, the bandwidth is reduced, because the internal capacitance increases. Smaller values of feedback resistor can be used at lower supply voltages, to compensate for this affect. Feedback and Gain Resistor Selection for Optimum Frequency Response A current feedback operational amplifier's key advantage is the ability to maintain optimum frequency response independent of gain by using appropriate values for the feedback resistor. To obtain a very flat gain response, the feedback resistor tolerance should be considered as well. Resistor tolerance of 1% should be used for optimum flatness. Normally, lowering RF resistor from its recommended value will peak the frequency response and extend the bandwidth while increasing the value of RF resistor will cause the frequency response to roll off faster. Reducing the value of RF resistor too far below its recommended value will cause overshoot, ringing, and eventually oscillation. Since each application is slightly different, it is worth some experimentation to find the optimal RF for a given circuit. A value of the feedback resistor that produces X0.1 dB of peaking is the best compromise between stability and maximal bandwidth. It is not recommended to All device pins have limited ESD protection using internal diodes to power supplies as specified in the attributes table (see Figure 24). These diodes provide moderate protection to input overdrive voltages above the supplies. The ESD diodes can support high input currents with current limiting series resistors. Keep these resistor values as low as possible since high values degrade both noise performance and frequency response. Under closed-loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed-loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. NOTE: Human Body Model for +IN and -IN pins are rated at 0.8kV while all other pins are rated at 2.0kV. VCC External Pin VEE Internal Circuitry Figure 24. Internal ESD Protection http://onsemi.com 11 NCS2511 PACKAGE DIMENSIONS TSOP-5 SN SUFFIX CASE 483-02 ISSUE E D 5 1 2 4 3 S B L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 G C 0.05 (0.002) H K J M SOLDERING FOOTPRINT* 1.9 0.074 0.95 0.037 2.4 0.094 1.0 0.039 0.7 0.028 mm inches SCALE 10:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 12 NCS2511/D |
Price & Availability of NCS2511SNT1G |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |